Dr fujio masuoka biography examples
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A company set up by NAND inventor Dr Fujio Masuoka claims to have devised DRAM replacement technology called Dynamic Flash Memory (DFM), with flash-like block refresh and erase.
A DFM paper, “Dynamic Flash Memory with Dual Gate Surrounding Gate Transistor (SGT)”, was presented at the 13th IEEE International Memory Workshop (IMW) on 18 May by its co-inventors, doctors Koji Sakui and Nozomu Harada from Unisantis Electronics of Singapore. Masuoka, born in , set up Unisantis in to develop the vertical Surround Gate Transistor (SGT) technology which is used in DFM. There are more than Unisantis patents covering SGT and its potential uses cases include SRAM, DRAM, MRAM, RRAM/RERAM, logic circuits, and CMOS image sensors.
In a Unisantis announcement, Dr Koji Sakui said: “The memory industry has long-since accepted DRAM technology is nearing the end of its life, but its significant market means any replacement technologies must provide the right balance of performance, costs and future scalability. After significant internal research and testing, we are delighted to unveil DFM to the market as the leading long-term viable option to DRAM.”
A DRAM cell typically stores electrical charge in a capacitor. They have to be large enough to store a measurable charge and, as th
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Fujio Masuoka
Japanese engineer (born )
Fujio Masuoka (舛岡 富士雄, Masuoka Fujio, born May 8, ) is a Japanese engineer, who has worked for Toshiba and Tohoku University, and is currently chief technical officer (CTO) of Unisantis Electronics. He is best known as the inventor of flash memory, including the development of both the NOR flash and NAND flash types in the s.[1] He also invented the first gate-all-around (GAA) MOSFET (GAAFET) transistor, an early non-planar 3D transistor, in
Biography
[edit]Masuoka attended Tohoku University in Sendai, Japan, where he earned an undergraduate degree in engineering in and doctorate in [2] He joined Toshiba in There, he invented stacked-gate avalanche-injection metal–oxide–semiconductor (SAMOS) memory, a precursor to electrically erasable programmable read-only memory (EEPROM) and flash memory.[3][4] In , he developed dynamic random-access memory (DRAM) with a double poly-Si structure. In he moved to Toshiba Semiconductor Business Division, where he developed 1&#;Mb DRAM.[3]
Masuoka was excited mostly by the idea of non-volatile memory, memory that would last even when power was turned off. The EEPROM of the time took very long to erase. He developed the "floating gate" technol